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| Semiconductor SB5312-H / SB5312-H(B) High Brightness LED Lamp Features * Colorless transparency lens type * 5mm(T-13/4) all plastic mold type * High luminosity Outline Dimensions STRAIGHT TYPE STOPPER TYPE unit : mm 4.80.2 4.80.2 9.00.2 9.00.2 1.2 0.2 1.2 0.2 3.80.5 0.5 23.0 MIN 0.5 23.0 MIN 1.0 MIN 2.54 NOM 1.0 MIN 2.54 NOM 1 2 5.80.2 1 2 5.80.2 PIN Connections 1.Anode 2.Cathode KLB-0005-000 1 SB5312-H / SB5312-H(B) Absolute maximum ratings Characteristic Power Dissipation Forward Current * Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature 2 1 Symbol PD IF IFP VR Topr Tstg Ratings 85 20 50 4 -2585 -30100 Unit mW mA mA V 260 for 5 seconds * Soldering Temperature Tsol *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of LED package Electrical Characteristics Characteristic Forward Voltage Luminous Intensity Peak Wavelength Spectrum Bandwidth Reverse Current Symbol VF IV Test Condition IF= 10mA IF= 10mA IF= 10mA IF= 10mA VR=4V IF= 10mA Min. 300 - Typ. 3.4 700 468 26 8 Max. 4.0 10 - Unit V mcd nm nm uA deg P IR 1/2 * Half angle 3 *3. 1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity KLB-0005-000 2 SB5312-H / SB5312-H(B) Characteristic Diagrams Fig. 1 IF - VF Fig. 2 IV - IF Forward Voltage VF [V] Luminous Intensity Iv [mcd] Forward Current IF [mA] Forward Current IF [mA] Fig. 3 IF - Ta Fig.4 Spectrum Distribution Current IF [mA] Forward Relative Intensity [%] Ambient Temperature Ta [] Wavelength [nm] Fig. 5 Radiation Diagram Relative Luminous Intensity Iv [%] KLB-0005-000 3 1. ESD(Electro Static Discharge) : Chip Al2o3 (Sapphire: ) Chip Damage VF Down 2. ESD 2-1. ESD (Electro Static Discharge) : (+) (-) ( , , , ) (-) (+) (+) (-) . : , , , , , : , , , , : , . 2-2. -. . 80% . (10%~20%) (65%~90%) Table 6[KV] 0.1[KV] 7[KV] 0.6[KV] 20[KV] 1.2[KV] -. -. : Wrist Strap ( ), Heel Grounder, , , , -. Conveyer Table : Conductive Floor Mat ESD . KLB-0005-000 4 |
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